【产品】8n-位预取架构的DDR4 SDRAM AS4C1G16D4,电源电压1.2V±60mV

2023-02-14 Alliance
DDR4 SDRAM,高速动态随机存取存储器,AS4C1G16D4,AS4C1G16D4-062BCN DDR4 SDRAM,高速动态随机存取存储器,AS4C1G16D4,AS4C1G16D4-062BCN DDR4 SDRAM,高速动态随机存取存储器,AS4C1G16D4,AS4C1G16D4-062BCN DDR4 SDRAM,高速动态随机存取存储器,AS4C1G16D4,AS4C1G16D4-062BCN

ALLIANCE推出的DDR4 SDRAM AS4C1G16D4是一款高速动态随机存取存储器,内部配置为x16配置的8块动态随机存取存储器。DDR4 SDRAM采用8n-预取架构,实现高速运行。8n-预取架构与一个接口相结合,该接口每个时钟周期可在I/O引脚处传输两个数据字。


DDR4 SDRAM的单个读或写操作由内部DRAM核心上的单个8n-位宽、四时钟的数据传输和在I/O引脚上的两个对应的n-位宽、一个半时钟周期的数据传输构成。


单个商用温度器件选项要求外壳温度不低于0℃或高于95℃。JEDEC规格要求TC超过85°C时刷新率翻倍;也需要使用高温自我刷新选项。


产品特点

• VDD=VDDQ=1.2V±60mV

• VPP=2.5V,–125mV,+250mV

• 片内,内置,可调VREFDQ发生器

• 1.2V伪开漏I/O

• Tc与刷新时间

Tc-40℃至85℃,8192个周期/64ms

Tc>85℃至95℃,8192个周期/32ms 

• 内部配置8个bank(x16):2组,每组4个bank 

• 8n-位预取架构

• 可编程数据选通前导码

• 数据选通前导码训练

• 命令/地址延迟(CAL)

• 多用途寄存器读写能力

• 写入均衡

• 自刷新模式

• 低功耗自动刷新(LPASR)

• 温控刷新(TCR)

• 细粒度刷新

• 自刷新终止

• 最大节能

• 输出驱动器校准

• 额定片内终结(ODT), 静态片内终结(ODT), 动态片内终结(ODT)

• 数据总线的数据总线反转(DBI)

• 命令/地址(CA)校验

• 数据总线编写循环冗余校验(CRC)

• 单个动态随机存取存储器(DRAM) 可寻址能力

• 导通测试

• 符合JEDEC JESD-79-4 

• sPPR和hPPR能力

订购信息



表1: 关键时间参数


表2: 寻址



订购器件编号示例


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